Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two‐Dimensional PtSe ₂ Insertion Layer

Electrochemical metallization threshold switch (ECM TS) has received significant attention for various applications owing to its high ON/OFF ratio, fast switching characteristics, and simple active electrode/dielectric layer/inert electrode structures. However, the excess diffusion of metal ions causes severe variation in voltage poor endurance. Furthermore, small room inert is a problem be solved ECM TS. Here, novel structure proposed which two-dimensional platinum diselenide (PtSe2) inserted between dielectric layer engineer conductive filament by controlling ion concentration. The low work function, superior inertness, layered structure, smooth surface PtSe2 insertion lead thin weak with few atoms allow use metals as electrode. Consequently, PtSe2-inserted TS shows reliability both distribution (σ/µ = ≈6.58%) endurance (>106 cycles). TS-based 2 × cross-bar array AND OR logic circuits. This study expected pave way development next-generation electronic applications.